vishay siliconix si1032r/x document number: 71172 s-81543-rev. e, 07-jul-08 www.vishay.com 1 n-channel 1.5-v (g-s) mosfet features ? halogen-free option available ? low-side switching ? low on-resistance: 5 ? low threshold: 0.9 v (typ.) ? fast switching speed: 35 ns ? trenchfet ? power mosfets: 1.5-v rated ? 2000 v esd protection benefits ? ease in driving switches ? low offset (error) voltage ? low-voltage operation ? high-speed circuits ? low battery voltage operation applications ? drivers: relays, solenoids, lamps, hammers, displays, memories ? battery oper ated systems ? power supply converter circuits ? load/power switching cell phones, pagers product summary v ds (v) r ds(on) ( )i d (ma) 20 5 at v gs = 4.5 v 200 7 at v gs = 2.5 v 175 9 at v gs = 1.8 v 150 10 at v gs = 1.5 v 50 orderin g information: SI1032R-T1-E3 (sc-75a, lead (p b )-free) si1032r-t1-ge3 (sc-75a, lead (p b )-free and halogen-free) si1032x-t1-e3 (sc- 8 9, lead (p b )-free) si1032x-t1-ge3 (sc- 8 9, lead (p b )-free and halogen-free) top v ie w 2 1 s d g 3 marking code: g sc-75a or sc-89 notes: a. surface mounted on fr4 board. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol si1032r si1032x unit 5 s steady state 5 s steady state drain-source voltage v ds 20 v gate-source voltage v gs 6 continuous drain current (t j = 150 c) a t a = 25 c i d 200 140 210 200 ma t a = 85 c 110 100 150 140 pulsed drain current a i dm 500 600 continuous source current (diode conduction) a i s 250 200 300 240 maximum power dissipation a for sc-75 t a = 25 c p d 280 250 340 300 mw t a = 85 c 145 130 170 150 operating junction and storage temperature range t j , t stg - 55 to 150 c gate-source esd rating (hbm, method 3015) esd 2000 v rohs compliant
www.vishay.com 2 document number: 71172 s-81543-rev. e, 07-jul-08 vishay siliconix si1032r/x notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not s ubject to production testing. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. typical characteristics t a = 25 c, unless otherwise noted specifications t a = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.40 0.7 1.2 v gate-body leakage i gss v ds = 0 v, v gs = 2.8 v 0.5 1.0 a v ds = 0 v, v gs = 4.5 v 1.0 3.0 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v 1 v ds = 20 v, v gs = 0 v, t j = 55 c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 250 ma drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 200 ma 5 v gs = 2.5 v, i d = 175 ma 7 v gs = 1.8 v, i d = 150 ma 9 v gs = 1.5 v, i d = 40 ma 10 forward transconductance a g fs v ds = 10 v, i d = 200 ma 0.5 s diode forward voltage a v sd i s = 150 ma, v gs = 0 v 1.2 v dynamic b total gate charge q g v ds = 10 v, v gs = 4.5 v, i d = 250 ma 750 pc gate-source charge q gs 75 gate-drain charge q gd 225 tu r n - o n d e l ay t i m e t d(on) v dd = 10 v, r l = 47 i d ? 200 ma, v gen = 4.5 v, r g = 10 50 ns rise time t r 25 turn-off delay time t d(off) 50 fall time t f 25 output characteristics 0.0 0.1 0.2 0.3 0.4 0.5 0123456 v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d v gs = 5 thr u 1. 8 v 1 v transfer characteristics 0 100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 2.5 v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (ma) i d t j = - 55 c 125 c 25 c
document number: 71172 s-81543-rev. e, 07-jul-08 www.vishay.com 3 vishay siliconix si1032r/x typical characteristics t a = 25 c, unless otherwise noted on-resistance vs. drain current gate charge surge-drain diode forward voltage - on-resistance ( ) r ds(on) 0 10 20 30 40 50 0 50 100 150 200 250 i d - drain c u rrent (ma) v gs = 1. 8 v v gs = 4.5 v v gs = 2.5 v 0 1 2 3 4 5 0.0 0.2 0.4 0.6 0. 8 - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs v ds = 10 v i d = 150 ma 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1000 1 v sd ) v ( e g a t l o v n i a r d - o t - e c r u o - s - so u rce c u rrent (ma) i s t j = 125 c t j = 25 c t j = 50 c 10 100 capacitance on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 04 8 12 16 20 v ds - drain-to-so u rce v oltage ( v ) c rss c oss c iss v gs = 0 v f = 1 mhz c - capacitance (pf) 0.60 0. 8 0 1.00 1.20 1.40 1.60 - 50 - 25 0 25 50 75 100 125 v gs = 4.5 v i d = 200 ma t j - j u nction temperat u re (c) v gs = 1. 8 v i d = 175 ma r ds(on) - on-resistance ( n ormalized) 0 10 20 30 40 50 0123456 i d = 175 ma - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) i d = 200 ma
www.vishay.com 4 document number: 71172 s-81543-rev. e, 07-jul-08 vishay siliconix si1032r/x typical characteristics t a = 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. products may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?71172 . threshold voltage variance vs. temperature - 0.3 - 0.2 - 0.1 0.0 0.1 0.2 0.3 - 50 - 25 0 25 50 75 100 125 i d = 0.25 ma v ariance ( v ) v gs(th) t j - temperat u re (c) i gss vs. temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - 50 - 25 0 25 50 75 100 125 t j - temperat u re (c) i gss - ( a) v gs = 2. 8 v bv gss vs. temperature 0 1 2 3 4 5 6 7 - 50 - 25 0 25 50 75 100 125 t j - temperat u re (c) b v gss - gate-to-so u rce breakdo w n v oltage ( v ) normalized thermal transient impedance, junction-to-ambient (sc-75a, si1032r only) 10 -3 10 -2 0 0 6 0 1 1 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single p u lse d u ty cycle = 0.5 sq u are w a v e p u lse d u ration (s) n ormalized effecti v e transient thermal impedance 1. d u ty cycle, d = 2. per unit base = r thja = 500 c/ w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 n otes: 4. s u rface mo u nted p dm
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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